Senior/Principal SiC Device Design and Process Integration Engineer

Location: Bangalore, India

• Design of High Voltage Power MOSFETs and diodes in SiC and GaN Technologies
• Define device design and process platform specifics to meet design targets
• Perform TCAD process and device simulations, layout design
• Design rules definition and maintenance through generation of device designs
• Electrical characterization of prototypes, data analysis, and design debug
• Improving existing products and participate in next generation product portfolio discussions
• Novel device designs, Generate new Intellectual Property

Requirements

• MS/PhD in Microelectronics, Solid State Physics or Electrical Engineering
• 5-8 years of experience in power MOSFET and IGBT design and/or fabrication
• Hands-on experience in power device technology and process development
• Proficiency in TCAD modelling and simulation tools (Synopsys or Silvaco Design Environment preferred), Layout design environment (e.g. Cadence, K-Layout, L-Edit)
• Develop physically productive simulation decks for a given power technology
• Understanding of substrate material and epitaxial growth, strong knowledge in power MOSFET device physics, fabrication and characterization principles
• Knowledge and experience in design for reliability and robustness, RBSOA (Reverse Bias Safe Operating Area) and SCSOA (Short Circuit Safe Operating Area)
• Familiarity of Qualification and Reliability Standards such as JEDEC and AEC-Q101
• Anticipate, analyze, and implement systematic problem-solving techniques for device design related issues