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Memory Circuit Design Engineer

Capgemini Engineering

2 - 5 years

Bengaluru

Posted: 10/12/2025

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Job Description

Role: Memory Circuit Design Engineer

Experience: 4 to 12 Years

Location: PAN INDIA


Job Description:


  • Digital Full Custom CKT Design
  • Bitcell Design
  • Design of simpler memory blocks (decoding, rowdec, SA, IO block w/o RA, WA)
  • Design of complex blocks like RA, WA, Rd selftime and write selftime
  • SPRAM/Dual Port/ROM architecture
  • Exploring and providing new ckt design and memory architectures Nice to have
  • Library CKT verification at Compiler level
  • Sense Amp Analysis(offset, pulse width, glitch, coupling etc.)"
  • Read/Write Selftime Analysis
  • Functional/Power Marginality analysis
  • Latch analysis
  • ESPCV
  • Power ON and power sequencing checks
  • Extraction, IR/EM analysis, PERC etc. Nice to have
  • Library CKT Char and Char verification
  • Timing, power, leak etc. setups(definitions, stimuli, MCF etc.)
  • Timing, power, leak etc. verification (new addition)
  • LVF analysis and implementation
  • Critical Path Tight Stimuli (CPTS)
  • Full Cut Tight Stimuli (FCTS)
  • FC power, timing, power, leak and comparison with CP
  • Decoupling CAP
  • Ageing (char)
  • Concept of Grid Concept should be known; methodology can be different in diff organizations
  • Infrastructure, Packaging & Delivery ST Methodology will be trained separately
  • CAD Tools (More conceptual knowledge needed, tools can be different)
  • Global BIST solutions e.g., MASIS, IR Drop solutions, AVM, RedHawk etc.
  • Simulators e.g., XA, Eldo
  • High sigma analysis (eldo FFP etc.)

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