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Process Engineer

AGNIT Semiconductors

2 - 5 years

Bengaluru

Posted: 07/06/2026

Job Description

Job Overview:

In this role, you will be pivotal in developing C-band and X-band GaN HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.

Key Responsibilities:

  • Design: Design reticles, masks and process flows for developing 0.25 um GaN on SiC HEMTs on 4-inch wafers as well as on smaller pieces


  • Fabrication: Drive fabrication of such HEMTs in conjunction with a small-volume GaN foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules.


  • Intermediate characterization and testing: Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow.


  • Final device deliverable: Own up the device development effort and have final HEMTs fully characterized for DC, pulsed, small-signal and large-signal measurements, and based on electrical data & performance, improve any process step or module or epi-stack, iteratively, until desired performance specs of HEMTs are achieved.


  • Documentation and Communication: Produce comprehensive design, fabrication, testing documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making. Collaborate closely with other process engineers, GaN foundry team, device modeling & reliability engineers, test and RF characterization engineers.


Qualifications:

  • Education: Masters or PhD in EE/ECE/E&I Engineering or related field.
  • Experience: At least 2+ years of experience post-education in transistor design/development/characterization and/or transistor fabrication in cleanroom.
  • Technical Expertise: Strong knowledge of transistors and some baseline exposure/experience in transistor fabrication in cleanroom. Must be experienced in transistor characterization/testing.


Who does NOT qualify: Candidates who've worked on LEDs, photodetectors, sensors, filters, MEMS, etc. in any capacity.

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