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Memory Design Engineer

UST

2 - 5 years

Bengaluru

Posted: 23/04/2026

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Job Description

Job Title: Memory Design Engineer

Experience: 38 Years

Location: Bengaluru

Job Summary

We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cuttingedge foundry technologies. Experience with Samsung Foundry is mandatory.


Key Responsibilities

  • Design and development of highperformance SRAM and memory circuits at advanced technology nodes.
  • Memory circuit design, modeling, and verification across multiple process corners.
  • Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred.
  • Perform detailed circuit simulations, analysis, and debugging to meet PPA targets.
  • Collaborate with foundry, layout, and verification teams to ensure robust memory design signoff.
  • Contribute to design reviews and drive solutions based on strong design fundamentals.


Required Skills & Qualifications

  • 38 years of hands-on experience in Memory Design.
  • Strong expertise in SRAM design, memory modeling, verification, and circuit design.
  • Solid understanding of advanced CMOS design concepts and deepsubmicron effects.
  • Proven experience working with Samsung Foundry (mandatory).
  • Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred.
  • Strong problemsolving skills with a solid grasp of analog and digital circuit fundamentals.

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